Formation and evolution of InAs 3D islands on GaAs(001) and a comparative C-AFM and NC-AFM study of InAs 3D islands

Materials Research Society Symposium - Proceedings

Volumn 440, Issue , 1997, Pages 31-37

  Ramachandran, T R ^a   Kobayashi, N P ^a   Heitz, R ^a   Chen, P ^a   Madhukar, A ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MASS TRANSFER; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; VACUUM APPLICATIONS;

INDIUM ARSENIDE;

SEMICONDUCTOR GROWTH;

EID: 0031378182     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)