Ag-mediated step-bunching instability on vicinal Si(100)

Surface Science

Volumn 394, Issue 1-3, 1997, Pages 60-70

  Folsch S ^a   Meyer, G ^a   Rieder, K H ^a   Horn von Hoegen, M ^b   Schmidt, T ^b   Henzler, M ^b  

^a FREIE UNIVERSITÄT BERLIN   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Electron solid diffraction; Low energy electron diffraction (LEED); Scanning tunnelling microscopy; Silicon; Silver; Single crystal surfaces; Surface structure, morphology, roughness, and topography; Vicinal single crystal surfaces

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR STRUCTURE; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SILVER; SINGLE CRYSTALS; SURFACE ROUGHNESS;

SURFACE RECONSTRUCTION; VICINAL SINGLE CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0031378177     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00589-X     Document Type: Article

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