Nickel metallization of Si by dynamic ion-beam mixing

Radiation Effects and Defects in Solids

Volumn 143, Issue 1, 1997, Pages 65-74

  Matsuoka, M ^a   Chubaci, J F D ^a   Biersack, J P ^a   Watanabe, S ^a   Kuratani, N ^b   Ogata, K ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

Dynamic ion beam mixing; Monte Carlo simulation: Nickel silicide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTER SIMULATION; CRYSTAL STRUCTURE; ION BEAMS; ION BOMBARDMENT; METALLIZING; MONTE CARLO METHODS; MORPHOLOGY; NICKEL; SCANNING ELECTRON MICROSCOPY; THIN FILMS; VAPOR DEPOSITION;

DYNAMIC ION BEAM MIXING; NICKEL SILICIDE;

SILICON WAFERS;

EID: 0031377791     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159708212949     Document Type: Article

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