High-density chain ferroelectric random-access memory (CFRAM)

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 1997, Pages 83-84

  Takashima, D ^a   Kunishima, I ^a   Noguchi, M ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CELLULAR ARRAYS; FERROELECTRIC DEVICES; INTEGRATED CIRCUIT LAYOUT; NAND CIRCUITS; TRANSISTORS;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); FOLDED BIT LINE ARCHITECTURE;

RANDOM ACCESS STORAGE;

EID: 0031376621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/vlsic.1997.623818     Document Type: Conference Paper

References (8)