Disordering and annealing of a Si surface under low-energy Si bombardment

Radiation Effects and Defects in Solids

Volumn 142, Issue 1-4, 1997, Pages 497-515

  Hensel, Hartmut ^a   Urbassek, Herbert M ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

Author keywords

Amorphization; Defect annealing; Ion induced defects

Indexed keywords

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; ION BOMBARDMENT; MOLECULAR DYNAMICS; ORDER DISORDER TRANSITIONS; POINT DEFECTS; RADIATION DAMAGE;

ION INDUCED DEFECTS;

SILICON;

EID: 0031376407     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159708211630     Document Type: Article

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