Amorphous silicon thin-film transistors with a hot-wire active-layer deposited at high growth rate

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 905-910

  Chu, V ^a   Jarego, J ^a   Silva, H ^a   Silva, T ^a   Boucinha, M ^a   Brogueira, P ^a   Conde, J P ^a  

^a INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; FERMI LEVEL; FILM GROWTH; GLOW DISCHARGES; PHOTOCONDUCTIVITY;

AMORPHOUS SILICON THIN FILM TRANSISTORS; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON;

THIN FILM TRANSISTORS;

EID: 0031375559     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-905     Document Type: Conference Paper

References (11)