1 W output power from a 10 μm aperture 940 nm-laser diode with a RISAS-structure

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 1997, Pages 488-489

  Sebastian, J ^a   Bugge, F ^a   Erbert, G ^a   Wenzel, H ^a   John, W ^a   Rechenberg, I ^a   Pietzker, C ^a   Vogel, K ^a   Weyers, M ^a   Traenkle, G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; ETCHING; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

LASER THRESHOLD CURRENT; REAL INDEX GUIDED SELF ALIGNED (RISAS) LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0031375349     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)