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Volumn 476, Issue , 1997, Pages 207-212
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Chemical vapor deposited Teflon amorphous fluoropolymer as an interlevel dielectric material for low power integrated circuits
a
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
CHEMICAL VAPOR DEPOSITION;
CROSSTALK;
ENERGY DISSIPATION;
INTEGRATED CIRCUIT MANUFACTURE;
PERMITTIVITY;
POLYTETRAFLUOROETHYLENES;
ULTRAVIOLET RADIATION;
COMPUTERIZED RAPID ISOTHERMAL PROCESSING;
LOW POWER INTEGRATED CIRCUITS;
DIELECTRIC MATERIALS;
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EID: 0031374695
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-476-207 Document Type: Conference Paper |
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Times cited : (3)
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References (23)
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