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Volumn 470, Issue , 1997, Pages 23-28
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3.3 μm pyrometry in single sided RTA from 400-700 °C using in-situ measurement of reflection and transmission
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
LIGHT EMISSION;
LIGHT REFLECTION;
LIGHT TRANSMISSION;
OPTICAL VARIABLES MEASUREMENT;
PYROMETRY;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
THERMOCOUPLES;
TRANSPARENCY;
RAPID THERMAL CHEMICAL VAPOR DEPOSITION;
SILICON WAFERS;
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EID: 0031374660
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-470-23 Document Type: Conference Paper |
Times cited : (1)
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References (2)
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