Low-temperature (450 °C) poly-Si thin film deposition on SiO2 and glass using a microcrystalline-Si seed layer

Materials Research Society Symposium - Proceedings

Volumn 472, Issue , 1997, Pages 427-432

  Wolfe, D M ^a   Wang, F ^a   Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; FILM GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SILICA; SURFACE STRUCTURE;

PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION;

ULTRATHIN FILMS;

EID: 0031374427     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-472-427     Document Type: Conference Paper

References (7)