Effect of implant energy on silicon defect evolution

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 283-289

  Desroches, J ^a   Krishnamoorthy, V ^a   Jones, K S ^a   Jasper, C ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ANNEALING; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY;

SILICON DEFECT EVOLUTION; TRANSIENT ENHANCED DIFFUSION;

SILICON WAFERS;

EID: 0031374412     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-283     Document Type: Conference Paper

References (8)