Single low voltage supply operation GaAs power MESFET amplifier with low-distortion gain-variable attenuator for 1.9-GHz personal handy phone systems

IEEE-CAS Region 8 Workshop on Analog and Mixed IC Design, Proceedings

Volumn , Issue , 1997, Pages 49-52

  Nagaoka, Masami ^a   Wakimoto, Hirotsugu ^a   Seshita, Toshiki ^a   Kawakyu, Katsue ^a   Kitaura, Yoshiaki ^a   Kameyama, Atsushi ^a   Uchitomi, Naotaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; ELECTRIC ATTENUATORS; MESFET DEVICES; PERSONAL COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE;

ADJACENT CHANNEL LEAKAGE POWER (ACP); PERSONAL HANDY PHONE SYSTEMS (PHS);

POWER AMPLIFIERS;

EID: 0031372248     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)