Comparison of muonium (hydrogen) dynamics in germanium and silicon

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 179-184

  Lichti, R L ^a   Chow, K H ^b   Cox, S F J ^c   Estle, T L ^d   Hitti, B ^e   Schwab, C ^f  

^a TEXAS TECH UNIVERSITY   (United States)

^b LEHIGH UNIVERSITY   (United States)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^d RICE UNIVERSITY   (United States)

^e TRIUMF   (Canada)

^f CNRS   (France)

Author keywords

Diffusion; Dynamics; Germanium; Hydrogen; Muonium; Silicon

Indexed keywords

CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; IONIZATION OF SOLIDS; MOLECULAR DYNAMICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

ELECTRON CAPTURE; MUONIUM;

HYDROGEN;

EID: 0031370837     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.179     Document Type: Review

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