Design and fabrication of nitride based high power devices

Materials Research Society Symposium - Proceedings

Volumn 483, Issue , 1997, Pages 399-404

  Bandic, Z Z ^a   Piquette, E C ^a   Bridger, P M ^a   Kuech, T F ^a   McGill, T C ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRON BEAMS; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; VOLTAGE MEASUREMENT;

ELECTRON BEAM INDUCED CURRENTS (EBIC);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031369602     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-483-399     Document Type: Conference Paper

References (10)