3.2 and 3.8 μm emission and lasing in AlGaAsSb/InGaAsSb double heterostructures with asymmetric band offset confinements

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 101-106

  Mikhailova, M P ^a   Zhurtanov, B E ^a   Moiseev, K D ^a   Imenkov, A N ^a   Ershov, O G ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMISSION; LIQUID PHASE EPITAXY; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTOR LASERS;

ASYMMETRIC BAND OFFSET CONFINEMENT; BAND ENERGY DIAGRAM; LASING; NARROW GAP ACTIVE LAYER;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031369417     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-484-101     Document Type: Conference Paper

References (10)