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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7344-7347

Strain mechanism of LiNbO3/sapphire heterostructures grown by pulsed laser deposition

(5) Shibata, Yoshihiko a Kuze, Naohiro a Matsui, Masahiro a Kanai, Masaki b Kawai, Tomoji b

a ASAHI CHEMICAL INDUSTRY CO (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Epitaxial thin film; LiNbO3; Pulsed laser deposition; Sapphire; Strain; Thermal expansion coefficients

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; LATTICE CONSTANTS; LITHIUM COMPOUNDS; PULSED LASER APPLICATIONS; SAPPHIRE; SINGLE CRYSTALS; STRAIN; THERMAL EXPANSION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL THIN FILM; LITHIUM NIOBATE; PULSED LASER DEPOSITION;

FILM GROWTH;

EID: 0031367237 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.7344 Document Type: Article

Times cited : (2)

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