Temperature-dependent widths of infrared and far-infrared absorption lines of oxygen in silicon

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 355-360

  Yamada Kaneta, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Impurity; Infrared absorption; Line width; Oxygen; Silicon

Indexed keywords

ABSORPTION; BAND STRUCTURE; CRYSTAL IMPURITIES; ELECTRIC EXCITATION; INTERFACIAL ENERGY; LOW TEMPERATURE EFFECTS; OXYGEN; PHONONS;

PHONON TRANSITIONS; TWO DIMENSIONAL LOW ENERGY ANHARMONIC EXCITATION;

SEMICONDUCTING SILICON;

EID: 0031366188     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.355     Document Type: Article

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