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Volumn 483, Issue , 1997, Pages 345-353

Novel technique for RTP annealing of compound semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON;

EID: 0031365447     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (14)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.