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Volumn 483, Issue , 1997, Pages 345-353
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Novel technique for RTP annealing of compound semiconductors
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ENERGY GAP;
HIGH TEMPERATURE EFFECTS;
ION IMPLANTATION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
ACTIVATION EFFICIENCY;
THIN FILMS;
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EID: 0031365447
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (14)
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