Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature

IEE Conference Publication

Volumn , Issue 448 /1, 1997, Pages 38-41

  Lestra, A ^a   Aubert, P ^a   Colson, V ^a   Gentner, J L ^a   Grard, E ^a   Lafragette, J L ^a   Le Gouezigou, L ^a   Pinquier, A ^a   Roux, L ^a   Toullier, D ^a   Tregoat, D ^a   Fernier, B ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE OPERATIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR QUANTUM WELLS;

BURIED RIDGE STRIPE (BRS) FABRY PEROT LASERS; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTOR LASERS;

EID: 0031365032     PISSN: 05379989     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)