More insights from CPM and PDS: Charged and neutral defects in a-Si:H

Solar Energy Materials and Solar Cells

Volumn 49, Issue 1-4, 1997, Pages 7-12

  Siebke, Frank ^a,b   Stiebig, Helmut ^a   Carius, Reinhard ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

a Si:H; CPM; Numerical simulation; PDS

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; ANNEALING; COMPUTER SIMULATION; DEGRADATION; ELECTRONIC DENSITY OF STATES; HYDROGENATION;

CHARGE STATE; CONSTANT PHOTOCURRENT METHOD; DEFECT ABSORPTIONS; ENERGY DISTRIBUTION; HYDROGENATED AMORPHOUS SILICON; NEUTRAL DEFECTS; PHOTOTHERMAL DEFLECTION SPECTROSCOPY;

SILICON SOLAR CELLS;

EID: 0031364608     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00169-4     Document Type: Article

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