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Volumn 469, Issue , 1997, Pages 457-462
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Influence of cavities and point defects on Cu gettering and B diffusion in Si
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
BORON;
COPPER;
CRYSTAL IMPURITIES;
DIFFUSION IN SOLIDS;
DISSOLUTION;
ION IMPLANTATION;
POINT DEFECTS;
GETTERING;
TRANSIENT ENHANCED DIFFUSION (TED);
SILICON WAFERS;
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EID: 0031364380
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-469-457 Document Type: Conference Paper |
Times cited : (3)
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References (12)
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