Dependence of reliability of ultrathin MOS gate oxides on the Fermi level positions at gate and substrate

Materials Research Society Symposium - Proceedings

Volumn 473, Issue , 1997, Pages 123-128

  Yang, Tien Chun ^a   Bhat, Navakanta ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; FERMI LEVEL; MOS DEVICES; OXIDES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

GATE OXIDES;

GATES (TRANSISTOR);

EID: 0031364352     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-473-123     Document Type: Conference Paper

References (11)