Comparison of oxidation induced stress and defectivity in SIMOX and bonded SOI wafers

IEEE International SOI Conference

Volumn , Issue , 1997, Pages 132-133

  Mendicino, M ^a   Yang, I ^a   Cave, N ^a   Veeraraghavan, S ^a   Gilbert, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ION IMPLANTATION; OXIDATION; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY; STRESSES; SUBSTRATES;

SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX); TRENCH OXIDATION;

SILICON WAFERS;

EID: 0031362882     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)