|
Volumn 394, Issue 1-3, 1997, Pages 119-128
|
Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7 x 7 structure
|
Author keywords
Semi empirical models and model calculations; Semiconducting surfaces; Silicon; Single crystal surfaces; Surface relaxation and reconstruction
|
Indexed keywords
COMPOSITION EFFECTS;
MATHEMATICAL MODELS;
OXYGEN;
QUANTUM THEORY;
RELAXATION PROCESSES;
SINGLE CRYSTALS;
STACKING FAULTS;
SURFACE STRUCTURE;
DIMER STACKING FAULT (DS) STRUCTURE;
SURFACE RECONSTRUCTION;
SEMICONDUCTING SILICON;
|
EID: 0031362829
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(97)00598-0 Document Type: Article |
Times cited : (6)
|
References (23)
|