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Volumn 394, Issue 1-3, 1997, Pages 119-128

Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7 x 7 structure

Author keywords

Semi empirical models and model calculations; Semiconducting surfaces; Silicon; Single crystal surfaces; Surface relaxation and reconstruction

Indexed keywords

COMPOSITION EFFECTS; MATHEMATICAL MODELS; OXYGEN; QUANTUM THEORY; RELAXATION PROCESSES; SINGLE CRYSTALS; STACKING FAULTS; SURFACE STRUCTURE;

EID: 0031362829     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00598-0     Document Type: Article
Times cited : (6)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.