A study of the defect structures in MOCVD-grown PbZrxTi1-xO3 thin films by thermally stimulated current measurements

Integrated Ferroelectrics

Volumn 18, Issue 1-4, 1997, Pages 63-70

  Okino, H ^a   Shimizu, M ^b   Horiuchi, T ^a   Shiosaki, T ^a   Matsushige, K ^a  

^a KYOTO UNIVERSITY   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

Defects; Fatigue; Ferroelectric thin films; PZT; TSC

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; FERROELECTRIC MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; THIN FILMS;

FERROELECTRIC THIN FILM; LEAD ZIRCONIUM TITANATE; POLARIZATION FATIGUE; THERMALLY STIMULATED CURRENT MEASUREMENT;

DIELECTRIC FILMS;

EID: 0031362823     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708221686     Document Type: Article

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