On-chip decoupling capacitance with high dielectric constant and strength using SrTiO3 thin films electron-cyclotron-resonance-sputtered at 400°C

Journal of the Electrochemical Society

Volumn 144, Issue 12, 1997, Pages 4321-4325

  Itsumi, Manabu ^a   Ohfuji, Shin Ichi ^a   Tsukada, Mitsuo ^a   Akiya, Hideo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRON CYCLOTRON RESONANCE; MIM DEVICES; PERMITTIVITY; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS;

DIELECTRIC STRENGTH; ON-CHIP DECOUPLING; TIME DEPENDENT DIELECTRIC BREAKDOWN;

THIN FILMS;

EID: 0031362175     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838185     Document Type: Article

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