Erbium related defects in gallium arsenide

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1551-1558

  Peaker, A R ^a   Coppinger, F ^b   Efeoglu, H ^a   Evans Freeman, J H ^a   Maude, D K ^b   Portal, J C ^b   Rutter, P ^a   Singer, K E ^a   Scholes, A ^a   Wright, A C ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b CNRS   (France)

^c GLYNDWR UNIVERSITY   (United Kingdom)

Author keywords

Defects; DLTS; Erbium; Gallium arsenide; Luminescence; Quantum dots; Silicon

Indexed keywords

COMPOSITION EFFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ERBIUM; LUMINESCENCE OF INORGANIC SOLIDS; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHASE SEPARATION; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

ERBIUM ARSENIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031361760     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1551     Document Type: Article

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