Influence of fabrication conditions on properties of Si:Er light-emitting structures

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1527-1532

  Sobolev, N A ^a   Emel'yanov, A M ^b   Nikolaev, Yu A ^a   Shtel'makh, K F ^b   Kudryavtsev, Yu A ^a   Sakharov, V I ^a   Serenkov, I T ^a   Makovijchuk, M I ^c   Parshin, E O ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c Institute of Microelectronics   (Russian Federation)

Author keywords

Defects; Erbium; Luminescence; Silicon

Indexed keywords

ANNEALING; BORON; CRYSTAL DEFECTS; ELECTROLUMINESCENCE; ERBIUM; ETCHING; OPTICAL PROPERTIES; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON WAFERS;

CHEMICAL ETCHING; METAL CONTACT EVAPORATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031361759     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1527     Document Type: Article

References (16)

1. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983).
2. H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haudl, and J. Schneider, Appl. Phys. Lett. 46, 381 (1985).
3. J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y. H. Xie, J. M. Poate, and L. C. Kimerling, J. Appl. Phys. 70, 2672 (1991).
4. Rare Earth Doped Semiconductors II, MRS Symp. Proc. 422 (1996).
5. I. N. Yassievich and L. C. Kimerling, Semicond. Sci. Technol. 8, 718 (1993).
6. F. Y. G. Ren, J. Michel, Q. Sun-Paduano, B. Zheng, H. Kitagawa, D. S. Jacobson, J. M. Poate, and L. C. Kimerling, MRS Symp. Proc. 301, 87 (1993).
7. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 64, 2842 (1994).
8. G. Franzo, F. Priolo, S. Coffa, and A. Camera, Appl. Phys. Lett. 64, 2235 (1994).
9. S. Coffa, F. Priolo, G. Franzo, A. Polman, S. Libertino, M. Saggio, and A. Camera, Nucl. Instrum. Meth. B 106, 386 (1995).
10. J. Stimmer, A. Reittinger, J. F. Nutzel, G. Abstreiter, H. Holzbrecher, and Ch. Buchal, Appl. Phys. Lett. 68, 3290 (1996).
11. S. Coffa, F. Priolo, G. Franzo, V. Bellani, A. Camera, and S. Spinella, Phys. Rev. B 48, 11782 (1993).
12. J. Michel, J. Palm, F. Gan, F. Y. G. Ren, B. Zheng, S. T. Dunham, and L. C. Kimerling, Mater. Sci. Forum 196-201, 585 (1995).
13. I. Tsimperidis, T. Gregorkiewicz, and C. A. J. Ammerlaan, Mater. Sci. Forum 196-201, 591 (1995).
14. N. A. Sobolev, O. V. Alexandrov, M. S. Bresler, O. B. Gusev, E. I. Shek, M. I. Makovijchuk, and E. O. Parshin, Mater. Sci. Forum 196-201, 597 (1995).
15. J. H. Shin, G. N. van den Hoven, and A. Polman, Appl. Phys. Lett. 67, 377 (1995).
16. A. G. Chynoweth and K. G. McKay, Phys. Rev. 102, 369 (1956).