Electrical and optical properties of nano-crystalline GaN and nano-crystalline GaN:H thin films

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 373-378

  Kobayashi, S ^a   Nonomura, S ^a   Abe, K ^a   Gotoh, T ^a   Hirata, S ^a   Nitta, S ^a   Kanemitsu, Y ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRON SPIN RESONANCE SPECTROSCOPY; ENERGY GAP; HYDROGENATION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING; THIN FILM TRANSISTORS;

FIELD EFFECT MOBILITY; LOCALIZED STATE; MID GAP STATE; REACTIVE SPUTTERING; THERMAL ANNEALING;

THIN FILMS;

EID: 0031361445     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-373     Document Type: Conference Paper

References (7)