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Volumn , Issue , 1997, Pages 975-978
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Effect of crystal defects on minority carrier diffusion lengths in 6H SiC
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
DATA REDUCTION;
DIFFUSION IN SOLIDS;
DIODES;
ERROR ANALYSIS;
IMAGE ANALYSIS;
SEMICONDUCTING SILICON COMPOUNDS;
ELECTRON BEAM INDUCED CURRENT (EBIC);
SILICON CARBIDE;
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EID: 0031361248
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (11)
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