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Volumn 97, Issue 1-3, 1997, Pages 39-44

Mechanical characterizations of nitride films deposited by ion-beam based techniques

Author keywords

In depth stress profiles; Intrinsic stress; Ion beam bombardment; Nitride films

Indexed keywords

ANNEALING; BORON COMPOUNDS; ION BEAMS; ION BOMBARDMENT; RESIDUAL STRESSES; SHOT PEENING; SILICON NITRIDE; SPUTTER DEPOSITION; THERMAL STRESS;

EID: 0031359492     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00161-8     Document Type: Article
Times cited : (11)

References (11)
  • 2
    • 0347584411 scopus 로고
    • Material modification by energtic atoms and ions
    • K.S. Grabowski, S.A. Barnett, S.M. Rossnagel, K. Wasa (Eds.)
    • M.A. Djouadi, D. Bouchier, Material modification by energtic atoms and ions, in: K.S. Grabowski, S.A. Barnett, S.M. Rossnagel, K. Wasa (Eds.), MRS Proc. 263 (1992) 185.
    • (1992) MRS Proc. , vol.263 , pp. 185
    • Djouadi, M.A.1    Bouchier, D.2
  • 6
    • 0347584410 scopus 로고
    • G. Barbotin, A. Vapaille (Eds.), North-Holland, Amsterdam
    • B. Leroy, in: G. Barbotin, A. Vapaille (Eds.), Instabilities in Silicon Devices, vol. 1, North-Holland, Amsterdam, 1986, p. 159.
    • (1986) Instabilities in Silicon Devices , vol.1 , pp. 159
    • Leroy, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.