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Volumn 470, Issue , 1997, Pages 413-418
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Growth and nitridation of silicon-dioxide films on silicon-carbide
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
DIELECTRIC FILMS;
ELECTRONIC DENSITY OF STATES;
ENERGY GAP;
FILM GROWTH;
MOSFET DEVICES;
NITRIDING;
NITROGEN OXIDES;
OXIDATION;
SEMICONDUCTOR DOPING;
SILICA;
SILICON CARBIDE;
SUBSTRATES;
ELECTRON MOBILITY;
SEMICONDUCTING FILMS;
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EID: 0031359120
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-470-413 Document Type: Conference Paper |
Times cited : (3)
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References (12)
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