Low-angle and high-angle grain boundaries in AlN/GaN layers grown on (0001) sapphire by MBE

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 435-440

  Potin, V ^a   Ruterana, P ^a   Hairie, A ^a   Nouet, G ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; MULTILAYERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH;

HIGH ANGLE GRAIN BOUNDARIES; MISORIENTATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031358242     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)