Investigations of GaN bulk single crystal near-surface layer by AES

Electron Technology (Warsaw)

Volumn 30, Issue 2, 1997, Pages 210-212

  Iller, A ^a   Konarski, P ^a   Marks, J ^a   Grzegory, I ^a   Bockowski, M ^a  

^a INSTITUTE OF VACUUM TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTALS; SEMICONDUCTOR GROWTH; SPUTTERING; THIN FILMS;

NEAR-SURFACE LAYER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031358150     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)