Site stability, diffusion, and charge dynamics for muonium in GaAs

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 849-854

  Estle, T L ^a   Chow, K H ^b   Cox, S F J ^c   Davis, E A ^d   Hitti, B ^e   Kiefl, R F ^f   Lichti, R L ^g   Schwab, C ^h  

^a RICE UNIVERSITY   (United States)

^b LEHIGH UNIVERSITY   (United States)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^d UNIVERSITY OF LEICESTER   (United Kingdom)

^e TRIUMF   (Canada)

^f UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^g TEXAS TECH UNIVERSITY   (United States)

^h CNRS   (France)

Author keywords

Diffusion; Dynamics; GaAs; Hydrogen; Muonium

Indexed keywords

CHARGE TRANSFER; DIFFUSION IN SOLIDS; HYDROGEN; MOLECULAR DYNAMICS; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CHARGE STATE TRANSITION; MUONIUM STATES; RECOMBINATION CENTER; SITE STABILITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031357835     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.849     Document Type: Article

References (14)

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2. For reviews of muonium in semiconductors see B.D. Patterson, Rev. Mod. Phys. 60, 69 (1988): R.F. Kiefl and T.L. Estle in Hydrogen in Semiconductors, ed. by J. Pankove and N.M. Johnson (Academic Press, New York, 1990) p547.
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