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Volumn 470, Issue , 1997, Pages 355-360
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Ultra low thermal budget rapid thermal processing for thin gate oxide dielectrics: Reduction of suboxide transition regions in low temperature processed Si/SiO2 structures by a 900 °C 30 second rapid thermal anneal
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL RELAXATION;
DEPOSITION;
DIELECTRIC RELAXATION;
GATES (TRANSISTOR);
HETEROJUNCTIONS;
PLASMA APPLICATIONS;
RELIABILITY;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SILICA;
GATE OXIDES;
PLASMA DEPOSITION;
THERMAL BUDGET;
DIELECTRIC FILMS;
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EID: 0031356747
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-470-355 Document Type: Conference Paper |
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Times cited : (1)
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References (15)
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