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Volumn 467, Issue , 1997, Pages 615-620
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a-Si:H and a-SiGe:H alloys fabricated close to powder regime of RF PECVD
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS ALLOYS;
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
CRYSTAL DEFECTS;
CRYSTAL MICROSTRUCTURE;
ELECTRONIC DENSITY OF STATES;
FERMI LEVEL;
HYDROGEN BONDS;
NANOSTRUCTURED MATERIALS;
PHOTOCONDUCTIVITY;
PLASMAS;
SILICON COMPOUNDS;
HYDROGENATED AMORPHOUS SILICON;
LIGHT INDUCED DEGRADATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
AMORPHOUS FILMS;
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EID: 0031356359
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-467-615 Document Type: Conference Paper |
Times cited : (3)
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References (9)
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