Fabrication of amorphous silicon p-i-n solar cells using ion shower doping technique

Solar Energy Materials and Solar Cells

Volumn 49, Issue 1-4, 1997, Pages 113-119

  Moon, Byeong Yeon ^a   Choi, Jong Hyun ^a   Kim, Jae Gak ^a   Jang, Jin ^a   Kim, Dae Won ^b   Bae, Sang Soon ^b   Yoon, Kyung Shik ^b  

^a Kyung Hee University   (South Korea)

^b Yukong Limited   (South Korea)

Author keywords

Amorphous silicon; Ion shower doping; p i n solar cells

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; DOPING (ADDITIVES); ELECTRIC VARIABLES MEASUREMENT; ENERGY CONVERSION; ENERGY EFFICIENCY; FILM PREPARATION; IONS; SEMICONDUCTOR DEVICES;

ION ACCELERATION VOLTAGE; ION SHOWER DOPING; OPEN CIRCUIT VOLTAGE;

SILICON SOLAR CELLS;

EID: 0031355271     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00184-0     Document Type: Article

References (7)

1. W.E. Spear, P.G. LeComber, Solid State Commun. 17 (1975) 1193.
2. D.E. Carlson, C.R. Wronski, Appl. Phys. Lett. 28 (1976) 671.
3. S. Wolf, R.N. Tauber, Silicon processing for the VLSI Era, Lattice Press, 1986, pp. 280-330.
4. W.E. Spear, P.G. LeComber, Solid State Commun. 17 (1975) 1193.
5. J.M. Jun, S.S. Yoo, J.I. Woo, K.H. Lee, H.K. Kang, K.M. Kim, J. Jang, J. Korean Phys. Soc. 26 (1993) S95.
6. H.J. Lim, B.Y. Ryu, J. Jang, Appl. Phys. Lett. 66 (21) (1995) 2888.
7. A. Yoshida, M. Kitagawa, T. Hirao, Jpn. J. Appl. Phys. 32 (1993) 2147.