Formation of Mo silicide on poly-Si field emitters for improved emission stability

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 1997, Pages 371-375

  Uh, Hyung Soo ^a   Park, Byung Gook ^a   Lee, Jong Duk ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON EMISSION; GAS ADSORPTION; MOLYBDENUM COMPOUNDS; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

POLYCRYSTALLINE SILICON FIELD EMITTERS;

FIELD EMISSION CATHODES;

EID: 0031355158     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)