Electrical defects of shallow (p+/n) junctions formed by boron implantation into Ge-preamorphized Si-substrates

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 413-418

  Alquier, D ^a   Benzohra, M ^a   Boussaid, F ^a   Olivie, F ^a   Martinez, A ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

END OF RANGE (EOR) DEFECTS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031353975     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-413     Document Type: Conference Paper

References (19)