Significance of charged defects in understanding the light-induced degradation of hydrogenated amorphous silicon-germanium alloys

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 55-60

  Chen, Chih Chiang ^a   Zhong, Fan ^a   Cohen, J David ^a   Yang, Jeffrey C ^a   Guha, Subhendu ^a  

^a UNIVERSITY OF OREGON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; DEGRADATION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; GLOW DISCHARGES; HYDROGENATION; OPTICAL VARIABLES MEASUREMENT; PHASE TRANSITIONS; PHOTOCHEMICAL REACTIONS; PHOTOCONDUCTIVITY; SILICON ALLOYS;

CHARGED DEFECTS; DEFECT TRANSITIONS; HOLE MOBILITY LIFETIME PRODUCTS; LIGHT INDUCED DEGRADATION; PHOTOCAPACITANCE MEASUREMENTS; PHOTOCURRENT MEASUREMENT;

AMORPHOUS ALLOYS;

EID: 0031353441     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-55     Document Type: Conference Paper

References (13)