Role of the gas flow parameters on the uniformity of films produced by PECVD technique

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 609-614

  Martins, R ^a   Macarico, A ^a   Ferreira, I ^a   Fortunato, E ^a  

^a UNINOVA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL FLUID DYNAMICS; FLOW OF FLUIDS; MATHEMATICAL MODELS; NAVIER STOKES EQUATIONS; PLASMAS; PRESSURE; SUBSTRATES; TEMPERATURE; THIN FILMS;

ELECTRO FLUID MECHANICS; HYDROGENATED AMORPHOUS SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS FILMS;

EID: 0031351337     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-609     Document Type: Conference Paper

References (11)