γ-ray irradiation effect on the intersubband transition in InGaAs/AlGaAs multiple quantum wells

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 637-641

  Manasreh, M O ^a   Chavez, J R ^a   Kemp, W T ^a   Hoenshel, K ^a   Missous, M ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; GAMMA RAYS; LIGHT ABSORPTION; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM GALLIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; INTERSUBBAND TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031349223     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)