Investigation for introduction of SAC etching technique to mass productive DRAM process

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 1997, Pages

  Sekiyama, Sumio ^a   Motoyama, Yoshikazu ^a   Iwasaki, Kenya ^a   Kuriyama, Naoya ^a   Fujimoto, Mamoru ^a   Tamiya, Yoshio ^a   Motokawa, Yousuke ^a   Kurachi, Ikuo ^a  

^a Miyazaki Oki Electric Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA DENSITY; PROCESS CONTROL; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

SELF ALIGNED CONTACT HOLE (SAC) ETCHING TECHNIQUE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031349186     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)