Photoluminescence quenching spectroscopy of trap-mediated Er3+ excitation mechanisms in Er-implanted GaN

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 667-672

  Rhee, S J ^a   Kim, S ^a   Li, X ^a   Coleman, J J ^a   Bishop, S G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; ENERGY GAP; ERBIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; QUENCHING;

CARRIER CAPTURE CROSS SECTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031349119     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-667     Document Type: Conference Paper

References (5)