Minority-carrier lifetime degradation in silicon co-doped with iron and gallium

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1997, Pages 59-62

  Ciszek, T F ^a   Wang, T H ^a   Doolittle, W A ^a   Rohatgi, A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISSOCIATION; IRON; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

MINORITY CARRIER LIFETIME DEGRADATION;

SEMICONDUCTING SILICON;

EID: 0031348963     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)