Relaxed InxGa1-xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 631-636

  Bulsara, M T ^a   Leitz, C ^a   Fitzgerald, E A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; PHASE SEPARATION; RELAXATION PROCESSES; SURFACE ROUGHNESS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GROWTH TEMPERATURE; INDIUM GALLIUM ARSENIDE; STRAIN FIELDS; THREADING DISLOCATION DENSITIES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031348950     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)