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Volumn 482, Issue , 1997, Pages 893-898
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Uniaxial stress effects on valence band structures of GaN
a a a a a a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
DEFORMATION;
FUNCTIONS;
NITRIDES;
POLARIZATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
SPECTROSCOPIC ANALYSIS;
STRESS ANALYSIS;
GALLIUM NITRIDE;
REFLECTANCE SPECTROSCOPY;
UNIAXIAL STRESS EFFECTS;
WAVEFUNCTIONS;
SEMICONDUCTING FILMS;
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EID: 0031348872
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-482-893 Document Type: Conference Paper |
Times cited : (4)
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References (17)
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