Atomic structure of grain boundaries and interfaces in III-nitrides epitaxial systems

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 387-392

  Ruvimov, S ^a   Liliental Weber, Z ^a   Washburn, J ^a   Amano, H ^a   Akasaki, I ^a   Koike, M ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON MICROSCOPY; GRAIN BOUNDARIES; METALLOGRAPHIC MICROSTRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; STACKING FAULTS;

NITRIDES EPITAXIAL SYSTEMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031348861     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-387     Document Type: Conference Paper

References (29)