Epitaxial growth and properties of Mg-doped GaN film produced by atmospheric MOCVD system with three layered laminar flow gas injection

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 113-118

  Akutsu, N ^a   Tokunaga, H ^a   Waki, I ^a   Yamaguchi, A ^a   Matsumoto, K ^a  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; EPITAXIAL GROWTH; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDES; LAMINAR FLOW GAS INJECTION;

SEMICONDUCTING FILMS;

EID: 0031348147     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)